Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics

Details Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics

1998-12-03

arxiv.org/abs/cond-mat/9812052v1

Solid State Comm. Vol 108 No. 6, pp 349-353 (1998)

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 3 figures, separate figures. This work is a follow-up of our earlier paper in APL, Ref. : APL Vol 71, pp 2385 (1997)

Scientific paper

Results of low temperature magnetoresistance ($\Delta\rho/\rho$) and isothermal magnetization (M) measurements on polycrystalline ferromagnetic (T_C close to 300 K) natural multilayers, LaMn_{2+x}Ge_{2-y}Si_y, are reported. It is found that the samples with large residual resistivity ratio, $\rho(300K)/\rho(4.2K)$, exhibit large positive magnetoresistance at high magnetic fields. The Kohler's rule is not obeyed in these alloys. In addition, at 4.5 K, there is a tendency towards linear variation of $\Delta\rho/\rho$ with magnetic field with increasing $\rho(300K)/\rho(4.2K$); however, the field dependence of $\Delta\rho/\rho$ does not track that of M, thereby suggesting that the magnetoresistance originates from non-magnetic layers. It is interesting that these experimental findings on bulk polycrystals are qualitatively similar to what is seen in artificially grown multilayer systems recently.

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