Frequency shift of optical phonons in doped graphene layers

Details Frequency shift of optical phonons in doped graphene layers Frequency shift of optical phonons in doped graphene layers

2007-02-27

arxiv.org/abs/cond-mat/0702627v2

Physics

Condensed Matter

Materials Science

4 pages, 3 figures, 1 table

Scientific paper

We use first-principles density-functional calculations to determine the frequency shift of the A$'_1$-${\bf K}$ phonon (Raman D band) in monolayer graphene, as a function of the charge doping. A detailed DFT study on the electron-phonon coupling and the phonon line width of E$_{2g}$-${\bm \Gamma}$ and A$'_1$-${\bf K}$ phonons are also performed for graphene multi-layers. Furthermore, we explain the experimentally observed '1/(Number of Layers)' behaviour of the Raman G band position after including the dynamic response treated within time dependent perturbation theory.

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