Hot Electron Magnetotransport in a Spin-Valve Transistor at Finite temperatures

Details Hot Electron Magnetotransport in a Spin-Valve Transistor at Finite temperatures Hot Electron Magnetotransport in a Spin-Valve Transistor at Finite temperatures

2001-05-09

arxiv.org/abs/cond-mat/0105190v1

Physics

Condensed Matter

p pages, 3 figures

Scientific paper

10.1016/S0304-8853(02)00032-X

The hot electron magnetotransport in a spin-valve transistor has been theoretically explored at finite temperatures. We have explored the parallel and anti-parallel collector current changing the relative spin orientation of the ferromagnetic layers at finite temperatures. In this model calculations, hot electron energy redistribution due to spatial inhomogeneity of Schottky barrier heights and hot electron spin polarization in the ferromagnetic layer at finite temperatures have been taken into account. The results of this model calculations accord with the experimental data semi-quantitative manner. We therefore suggest that both effects remarked above should be taken into account substantially when one explores the hot electron magnetotransport in a spin-valve system transistor at finite temperatures.

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