Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure

Details Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure

2001-02-02

arxiv.org/abs/cond-mat/0102044v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.64.041307

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g-factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g-factors.

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