Physics – Condensed Matter – Materials Science
Scientific paper
1999-08-09
Physics
Condensed Matter
Materials Science
4 pages, including 5 postscript figures; submitted to Phys. Rev. B Brief Report
Scientific paper
10.1103/PhysRevB.61.9895
The coefficient of diffusion of hydrogen in crystalline silicon is calculated using tight-binding molecular dynamics. Our results are in good quantitative agreement with an earlier study by Panzarini and Colombo [Phys. Rev. Lett. 73, 1636 (1994)]. However, while our calculations indicate that long jumps dominate over single hops at high temperatures, no abrupt change in the diffusion coefficient can be observed with decreasing temperature. The (classical) Arrhenius diffusion parameters, as a consequence, should extrapolate to low temperatures.
Bedard Sabrina
Lewis Laurent J.
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