Resonant tunneling in short Josephson SFS junctions

Details Resonant tunneling in short Josephson SFS junctions Resonant tunneling in short Josephson SFS junctions

2005-01-10

arxiv.org/abs/cond-mat/0501179v2

Phys. Rev. B 73, 184510 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.73.184510

Josephson effect in short ballistic SINIS and SIFIS double-tunnel junctions, consisting of clean superconductors (S), a normal metal (N) or metallic ferromagnet (F), and insulating interfaces (I) is studied. For SINIS double-tunnel junctions, sharp peaks in the critical Josephson current as a function of the junction width result from the resonant amplification of the Andreev process when the quasi-bound states enter the superconducting gap. For SIFIS double-tunnel junctions spin split quasi-bound states partially amplify the supercurrent and trigger the transitions between 0 and $\pi$ states of the junction. Instead of the critical current reaching a peak value (which happens when the Andreev states cross the Fermi surface in SINIS junctions), a narrow dip opens up exactly at the peak due to the compensation of partial currents flowing in opposite directions. This is related to the spin polarization of Andreev states and explains the coexistence of stable and metastable 0 and $\pi$ states in the vicinity of the transition. With increased barrier transparency, the described mechanism of $0-\pi$ transitions is modified by the broadening and overlapping of quasi-bound states (transmission resonances). Temperature-induced transitions both from 0 to $\pi$ and from $\pi$ to 0 states are studied by computing the phase diagram (temperature vs. junction width) for different interfacial transparencies varying from metallic (transparent) to the tunnel limit.

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