Linear and nonlinear regime of a Random Resistor Network under biased percolation

Physics – Condensed Matter – Statistical Mechanics

Scientific paper

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Contribution to the Proceedings of the Workshop CMS2001

Scientific paper

We investigate the steady state of a two-dimensional random resistor network subjected to two competing biased percolations as a function of the bias strength. The properties of the linear and nonlinear regimes are studied by means of Monte Carlo simulations. In constant current conditions, a scaling relation is found between $/_0$ and $I/I_0$, where $$ is the average network resistance, $_0$ the Ohmic resistance and $I_0$ an appropriate threshold value for the onset of nonlinearity. A similar scaling relation is found also for the relative variance of resistance fluctuations. These results are in good agreement with electrical breakdown measurements performed in composite materials.

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