Ultrasonic Defect Modification in Irradiated Silicon

Details Ultrasonic Defect Modification in Irradiated Silicon Ultrasonic Defect Modification in Irradiated Silicon

2003-10-29

arxiv.org/abs/cond-mat/0310675v1

Physics

Condensed Matter

Materials Science

9 pages, 2 figures; corrected typos in the text and figures

Scientific paper

It is shown for the first time, that room temperature Ultrasonic Defect Manipulation (UDM) can significantly reduce the concentration of radiation defects in high resistivity silicon. Secondary Ion Mass Spectroscopy revealed that oxygen- and hydrogen- related chemical reactions in silicon are likely to occur under UDM at room temperature. Ultrasonically stimulated chemical reactions in solids can be an important source of energy, which is required for UDM.

Affiliated with

Also associated with

No associations

Rating

Ultrasonic Defect Modification in Irradiated Silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Ultrasonic Defect Modification in Irradiated Silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultrasonic Defect Modification in Irradiated Silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-199433