Graphene on the C-terminated SiC (000 $\bar{1}$) surface: An ab initio study

Details Graphene on the C-terminated SiC (000 $\bar{1}$) surface: An ab initio study Graphene on the C-terminated SiC (000 $\bar{1}$) surface: An ab initio study

2009-02-10

arxiv.org/abs/0902.1638v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures, additional material

Scientific paper

The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here. Si adatoms passivate the substrate surface so that the very first C layer presents a linear dispersion characteristic of graphene. A small graphene-substrate interaction remains in agreement with scanning tunneling experiments (F.Hiebel et al. {\it Phys. Rev. B} {\bf 78} 153412 (2008)). The stacking geometry has little influence on the interaction which explains the rotational disorder observed on this face.

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