Role of Fermi-level pinning in nanotube Schottky diodes

Details Role of Fermi-level pinning in nanotube Schottky diodes Role of Fermi-level pinning in nanotube Schottky diodes

2000-03-28

arxiv.org/abs/cond-mat/0003454v1

Physics

Condensed Matter

4 pages, to appear in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.84.4693

At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning". We find that when a semiconducting carbon nanotube is end-contacted to a metal (the optinal geometry for nanodevices), the behavior is radically different. Even when the Fermi level is fully "pinned" at the interface, the turn-on voltage is that expected for the unpinned junction. Thus the threshold may be adjusted for optimal device performance, which is not possible in planar contacts. Similar behavior is expected at heterojunctions between nanotubes and semiconductors.

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