Physics – Condensed Matter – Materials Science
Scientific paper
2011-03-19
Phys. Rev. Lett. 107, 107203 (2011)
Physics
Condensed Matter
Materials Science
4 pages, 1 figure, 1 table
Scientific paper
10.1103/PhysRevLett.107.107203
We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the multivalley conduction band. We find excellent agreement with experimental results. Similar to the usage of the Kane Hamiltonian in direct band-gap semiconductors, the new Hamiltonian can be used to study spin properties of electrons in silicon.
Dery Hanan
Li Pengke
No associations
LandOfFree
Spin-Orbit Symmetries of Conduction Electrons in Silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Spin-Orbit Symmetries of Conduction Electrons in Silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin-Orbit Symmetries of Conduction Electrons in Silicon will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-198886