Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

Details Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

2000-03-27

arxiv.org/abs/cond-mat/0003429v1

Superlattice and Microstructure 27, 421 (2000)

Physics

Condensed Matter

Strongly Correlated Electrons

Presented at SIMD, Dec. 1999 in Hawaii. To be published in Superlattices and Microstructures, May 2000 issue

Scientific paper

10.1006/spmi.2000.0877

We present the results on the anomalous 2D transport behavior by employing
Drude-Boltzmann transport theory and taking into account the realistic charge
impurity scattering effects. Our results show quantitative agreement with the
existing experimental data in several different systems and address the origin
of the strong and non-monotonic temperature dependent resistivity.

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