Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

Details Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

2005-09-02

arxiv.org/abs/cond-mat/0509050v2

Phys. Rev. Lett. 95, 266403 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 3 figures, title changed

Scientific paper

10.1103/PhysRevLett.95.266403

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semi-conductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.

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