Tunneling Spin Injection into Single Layer Graphene

Details Tunneling Spin Injection into Single Layer Graphene Tunneling Spin Injection into Single Layer Graphene

2010-03-13

arxiv.org/abs/1003.2669v2

Phys. Rev. Lett. 105, 167202 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures. To appear in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.105.167202

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\Delta}RNL) of 130 {\Omega} is observed at room temperature, which is the largest value observed in any material. Investigating {\Delta}RNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

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