On the Origin of the -4.4 eV Band in CdTe(100)"

Details On the Origin of the -4.4 eV Band in CdTe(100)" On the Origin of the -4.4 eV Band in CdTe(100)"

1994-03-16

arxiv.org/abs/cond-mat/9403062v1

Physics

Condensed Matter

17 pages, Rev-TEX, CIEA-Phys. 02/94

Scientific paper

10.1103/PhysRevB.50.1980

We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at $\Gamma$ according to the results of Niles and H\"ochst and at -4.6 eV according to Gawlik {\it et al.} both obtained by Angle-resolved photoelectron spectroscopy (ARPES). We give the first theoretical description of this band.

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