On the Cooling of Electrons in a Silicon Inversion Layer

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

5 pages, 4 figures. Discussion corrected and a few references added

Scientific paper

10.1103/PhysRevLett.88.016801

The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in silicon. Unexpectedly, the extracted heat transfer rate to phonons at low temperatures depends cubically on electron temperature, suggesting that piezoelectric coupling (absent in bulk silicon) dominates over deformation potential. According to our findings, at 100 mK, electrons farther than 0.1 mm from the contacts are mostly cooled by phonons. Using long devices and low excitation voltage we measure electron resistivity down to 100 mK and find that some of the "metallic" curves, reported earlier, turn insulating below about 300 mK. This finding renders the definition of the claimed 2D metal-insulator transition questionable. Previous low temperature measurements in silicon devices are analyzed and thumb rules for evaluating their electron temperatures are provided.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

On the Cooling of Electrons in a Silicon Inversion Layer does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with On the Cooling of Electrons in a Silicon Inversion Layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and On the Cooling of Electrons in a Silicon Inversion Layer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-186363

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.