High-field Carrier Velocity and Current Saturation in Graphene Field-Effect Transistors

Details High-field Carrier Velocity and Current Saturation in Graphene Field-Effect Transistors High-field Carrier Velocity and Current Saturation in Graphene Field-Effect Transistors

2010-07-20

arxiv.org/abs/1007.3504v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 5 figures, submitted to IEEE Nano 2010 conference

Scientific paper

We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [1], without assuming a carrier density-dependent velocity saturation.

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