Stochastic Heterostructures in B/N-Doped Carbon Nanotubes

Details Stochastic Heterostructures in B/N-Doped Carbon Nanotubes Stochastic Heterostructures in B/N-Doped Carbon Nanotubes

2001-08-10

arxiv.org/abs/cond-mat/0108174v1

Physics

Condensed Matter

Materials Science

4 pages RevTeX, 4 PostScript figures

Scientific paper

10.1103/PhysRevLett.87.136402

Carbon nanotubes are one-dimensional and very narrow. These obvious facts imply that under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of exploiting such fluctuations to create interesting devices. Using self-consistent tight-binding (SCTB), we study heavily doped highly compensated nanotubes, revealing the spontaneous formation of structures resembling chains of random quantum dots, or nano-scale diode-like elements in series. We also consider truly isolated impurities, revealing simple scaling properties of bound state sizes and energies.

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