Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces

Details Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces

2005-02-03

arxiv.org/abs/cond-mat/0502081v1

Physics

Condensed Matter

Materials Science

4 pages, to be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.71.153401

The spatial distribution and site- distribution of metal induced gap states (MIGS) are studied by thickness dependent near edge x-ray absorption fine structure (NEXAFS) and comparing the cation and anion edge NEXAFS. The thickness dependent NEXAFS shows that the decay length of MIGS depends on rather an alkali halide than a metal, and it is larger for alkali halides with smaller band gap energy. By comparing the Cl edge and K edge NEXAFS for KCl/Cu(001), MIGS are found to be states localizing at anion sites.

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