Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures

Details Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures

2002-09-27

arxiv.org/abs/cond-mat/0209652v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

3 pages including 3 figures, Revtex; submitted to Phys. Rev. B

Scientific paper

For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by Papadakis and Shayegan are reanalyzed. In both cases, the rho(T=const.,n) curves for various values of the temperature T seem to exhibit an offset concerning n, where the related resistivity is close to h/e^2. This offset may result from a peculiarity in rho(T=const.,n) indicating the MIT to be present also at finite T. More detailed experiments are imperative.

Affiliated with

Also associated with

No associations

Rating

Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-171347