Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation

Details Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation

2012-03-08

arxiv.org/abs/1203.1701v2

Physics

Condensed Matter

Materials Science

6 pages, 1 figure; Preprint of an article submitted for consideration in [International Journal of Modern Physics: Conference

Scientific paper

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.

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