In Situ Treatment of a Scanning Gate Microscopy Tip

Details In Situ Treatment of a Scanning Gate Microscopy Tip In Situ Treatment of a Scanning Gate Microscopy Tip

2007-03-23

arxiv.org/abs/cond-mat/0703605v2

Appl. Phys. Lett. 90, 213113 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 1 figure, minor changes to fit published version

Scientific paper

10.1063/1.2742314

In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.

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