Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors

Details Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors

2005-05-12

arxiv.org/abs/cond-mat/0505308v4

PRB 74 085308 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

the expanded version published on Phys. Rev. B

Scientific paper

10.1103/PhysRevB.74.085308

We propose models of two dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk, and a "holographic metal" at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.

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