Physics – Condensed Matter – Materials Science
Scientific paper
2002-11-21
Phys. Rev. B 67, 155201 (2003)
Physics
Condensed Matter
Materials Science
17 pages, 15 figures
Scientific paper
10.1103/PhysRevB.67.155201
We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as Ga_{1-x}Mn_xAs with 0.03 < x < 0.07, whereas our percolation-theory-based calculations agree well with the existing data in strongly insulating materials, such as Ge_{1-x}Mn_x. We comment on the issue of non-mean-field like magnetization curves and on the observed incomplete saturation magnetization values in diluted magnetic semiconductors from our theoretical perspective. In agreement with experimental observations, we find the carrier density to be the crucial parameter determining the magnetization behavior. Our calculated dependence of magnetization on external magnetic field is also in excellent agreement with the existing experimental data.
Hwang Euyheon H.
Kaminski Adam
Sarma Sankar Das
No associations
LandOfFree
Temperature-dependent magnetization in diluted magnetic semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Temperature-dependent magnetization in diluted magnetic semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature-dependent magnetization in diluted magnetic semiconductors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-162000