Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate

Details Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate

2008-03-05

arxiv.org/abs/0803.0708v1

Appl. Phys. Lett. 92, 222502 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.2937305

We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.

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