Physics – Condensed Matter – Materials Science
Scientific paper
2011-02-18
ACS Nano 5 (6), 4698-4703 (2011)
Physics
Condensed Matter
Materials Science
Scientific paper
10.1021/nn200556h
Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements.
Analytis James G.
Cha Judy J.
Chen Yulin
Cui Yi
Fisher Ian R.
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