Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films

Details Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films

2011-01-18

arxiv.org/abs/1101.3538v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3536486

The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 {\deg}C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically-driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices.

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