Hall effect in Fe$_3$O$_4$ epitaxial thin films

Details Hall effect in Fe$_3$O$_4$ epitaxial thin films Hall effect in Fe$_3$O$_4$ epitaxial thin films

2004-03-17

arxiv.org/abs/cond-mat/0403422v2

Physics

Condensed Matter

Materials Science

Scientific paper

Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.

Affiliated with

Also associated with

No associations

Rating

Hall effect in Fe$_3$O$_4$ epitaxial thin films does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Hall effect in Fe$_3$O$_4$ epitaxial thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hall effect in Fe$_3$O$_4$ epitaxial thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-151731