Crossed Andreev reflection in a graphene bipolar transistor

Details Crossed Andreev reflection in a graphene bipolar transistor Crossed Andreev reflection in a graphene bipolar transistor

2008-01-15

arxiv.org/abs/0801.2292v3

Phys. Rev. Lett. 100, 147001 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures. Accepted in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.100.147001

We investigate the crossed Andreev reflections between two graphene leads connected by a narrow superconductor. When the leads are respectively of the n-and p- type, we find that electron elastic cotunneling and local Andreev reflection are both eliminated even in the absence of any valley-isospin or spin polarizations. We further predict oscillations of both diagonal and cross conductances as a function of the distance between the graphene-superconductor interfaces.

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