Donor type semiconductor at low temperature as maser active medium

Details Donor type semiconductor at low temperature as maser active medium Donor type semiconductor at low temperature as maser active medium

2007-04-12

arxiv.org/abs/0704.1629v1

Physics

Condensed Matter

Materials Science

Hydrogen atom and negative ion model for simple donor type semiconductors

Scientific paper

In some semiconductors donor impurity atoms can attract additional electrons, forming negative donor impurity ions. Thus we have 3 energy levels for electrons: zero energy levels at the bottom of the conductivity band, negative energy levels of the bounded electrons of the negative donor impurity ions, and deeper negative energy levels of the outer electrons of the neutral donor impurity atoms. So the donor impurity atoms could serve as active centres for a maser. The maximum achievable relative population is 0.5. Typical wavelength of the generated oscillation is 0.14 mm; three level scheme could be realized at rather low temperatures, considerably lower than 6 K.

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