Weak localisation in AlGaAs/GaAs p-type quantum wells

Details Weak localisation in AlGaAs/GaAs p-type quantum wells Weak localisation in AlGaAs/GaAs p-type quantum wells

1999-05-05

arxiv.org/abs/cond-mat/9905057v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 Pages, 5 figures, accepted for publication in PRB

Scientific paper

10.1103/PhysRevB.60.4880

We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible to treat the spin-orbit interaction as a perturbation. This is in contrast to all prior investigations of weak localisation. In this letter we compare the experimental results with a newly developed diffusion theory, which explicitly describes the weak localisation regime when the spin-orbit coupling is strong. The spin relaxation rates calculated from the fitting parameters was found to agree with theoretical expectations. Furthermore the fitting parameters indicate an enhanced phase breaking rate compared to theoretical predictions.

Affiliated with

Also associated with

No associations

Rating

Weak localisation in AlGaAs/GaAs p-type quantum wells does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Weak localisation in AlGaAs/GaAs p-type quantum wells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Weak localisation in AlGaAs/GaAs p-type quantum wells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-148318