Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

Details Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

2007-05-17

arxiv.org/abs/0705.2579v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1021/nl070378w

Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility due to device geometries, surface and interface states and gate dielectric constants and thicknesses. Direct experimental evidence showed that surround-gated nanowire transistors exhibit higher capacitance and better electrostatic gate control than top-gated devices, and are the most promising structure for future high performance nanoelectronics.

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