Slow relaxation of conductance of amorphous hopping insulators

Details Slow relaxation of conductance of amorphous hopping insulators Slow relaxation of conductance of amorphous hopping insulators

2007-05-17

arxiv.org/abs/0705.2565v3

Physics

Condensed Matter

Disordered Systems and Neural Networks

6 pages, 1 figure

Scientific paper

10.1088/0953-8984/20/24/244135

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.

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