Spin filling of valley-orbit states in a silicon quantum dot

Details Spin filling of valley-orbit states in a silicon quantum dot Spin filling of valley-orbit states in a silicon quantum dot

2011-03-15

arxiv.org/abs/1103.2895v2

Nanotechnology 22, 335704 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures, to appear in Nanotechnology

Scientific paper

10.1088/0957-4484/22/33/335704

We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realization in the near future of spin qubits based on silicon quantum dots.

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