Screening and interlayer coupling in multilayer graphene field-effect transistors

Details Screening and interlayer coupling in multilayer graphene field-effect transistors Screening and interlayer coupling in multilayer graphene field-effect transistors

2009-09-10

arxiv.org/abs/0909.2001v1

Yang Sui, Joerg Appenzeller, Nano Letters, 2009, 9 (8), 2973-2977

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 4 figures, 20 references

Scientific paper

10.1021/nl901396g

With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for Ion, Ioff, and the Ion/Ioff ratio, and propose a resistor network model including screening and interlayer coupling to explain the experimental findings. In particular, our model does not invoke modification of the linear energy-band structure of graphene for the multilayer case. Noise reduction in nano-scale few-layer graphene transistors is experimentally demonstrated and can be understood within this model as well.

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