Role of the gaunt factor in the derivation of dielectronic recombination coefficient

Details Role of the gaunt factor in the derivation of dielectronic recombination coefficient Role of the gaunt factor in the derivation of dielectronic recombination coefficient

Apr 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985soph...96..219a&link_type=abstract

Solar Physics (ISSN 0038-0938), vol. 96, April 1985, p. 219-227.

Physics

1

Absorption Cross Sections, Electron Recombination, Ionic Collisions, Plasma Resonance, Recombination Coefficient, Solar Corona, Atomic Excitations, Electron Capture, Iron, Oscillator Strengths, Silicon

Scientific paper

A new formula for the coefficient of dielectronic recombination has been derived by substituting an excitation cross-section extrapolated below threshold for capture cross-section in equation 7 of Burgess (1964). In this case, the excitation cross-section modified by Mewe (1972) through a fitted gaunt factor has been used. The dielectronic recombination coefficients calculated by the new formula are found to be about an order of magnitude smaller than those obtained by Burgess' simplified formula. The results for coronal ions of silicon and iron are presented here as sample calculations. A comparative study of the dielectronic recombination with radiative recombination is also made.

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