Tunneling between Dilute GaAs Hole Layers

Details Tunneling between Dilute GaAs Hole Layers Tunneling between Dilute GaAs Hole Layers

2007-06-09

arxiv.org/abs/0706.1268v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Revised to include additional data, new discussions

Scientific paper

10.1103/PhysRevB.77.161301

We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomalous features, including a recurrence of a zero-bias tunneling peak at very large fields. In a perpendicular magnetic field, we observe a robust and narrow tunneling peak at total filling factor $\nu_T=1$, signaling the formation of a bilayer quantum Hall ferromagnet.

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