Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

Details Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

2002-01-21

arxiv.org/abs/cond-mat/0201363v1

Physics

Condensed Matter

Materials Science

13 pages, 3 figures; Applied Physics Letters, March, 2002

Scientific paper

10.1063/1.1457526

We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x_eff, following the empirical equation T_C=1300x_eff. We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; x_eff>0.08) and the hole concentration is in the order of 10^19 cm^-3.

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