Single particle relaxation time versus transport scattering time in a 2D graphene layer

Details Single particle relaxation time versus transport scattering time in a 2D graphene layer Single particle relaxation time versus transport scattering time in a 2D graphene layer

2008-01-30

arxiv.org/abs/0801.4736v1

Phys. Rev. B 77, 195412 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 4 figures

Scientific paper

10.1103/PhysRevB.77.195412

We theoretically calculate and compare the single-particle relaxation time ($\tau_s$) defining quantum level broadening and the transport scattering time ($\tau_t$) defining Drude conductivity in 2D graphene layers in the presence of screened charged impurities scattering and short-range defect scattering. We find that the ratio $\tau_t/\tau_s$ increases strongly with increasing $k_F z_i$ and $\kappa$ where $k_F$, $z_i$, and $\kappa$ are respectively the Fermi wave vector, the separation of the substrate charged impurities from the graphene layer, and the background lattice dielectric constant. A critical quantitative comparison of the $\tau_t/\tau_s$ results for graphene with the corresponding modulation-doped semiconductor structures is provided, showing significant differences between these two 2D carrier systems.

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