Step edge barriers on GaAs(001)

Details Step edge barriers on GaAs(001) Step edge barriers on GaAs(001)

1993-11-29

arxiv.org/abs/cond-mat/9311061v1

Physics

Condensed Matter

11 pages, REVTeX 3.0, IC-DDV-93-005

Scientific paper

10.1103/PhysRevB.48.17603

We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of freshly--deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post--growth equilibration of the surface.

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