Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

Details Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

2004-12-20

arxiv.org/abs/cond-mat/0412550v1

Physics

Condensed Matter

Materials Science

4 pages

Scientific paper

We show that the bulk Dresselhauss ($k^3$) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato {\emph{et. al.}} \cite{kato2004A}. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.

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