Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As

Details Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As

2007-01-17

arxiv.org/abs/cond-mat/0701398v1

Proceedings of the 28th International Conference on the Physics of Semiconductors (2006), AIP Conf. Proc. -- April 10, 2007 --

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Comments accepted to: Proceedings of the 28th International Conference on the Physics of Semiconductors (AIP CP)

Scientific paper

10.1063/1.2730367

We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we predict the magnitude of the domain-wall resistance without disorder and compare it to experimental values. Next we add disorder to the model and study numerically both small and large disorder regime.

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