Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Details Spin states in InAs/AlSb/GaSb semiconductor quantum wells Spin states in InAs/AlSb/GaSb semiconductor quantum wells

2008-12-30

arxiv.org/abs/0812.5006v2

PHYSICAL REVIEW B 80, 035303 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 9 figures

Scientific paper

10.1103/PhysRevB.80.035303

We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin-splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin relaxation time shows several peaks with increasing the Fermi wavevector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.

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