Role of doped layers in dephasing of 2D electrons in quantum well structures

Details Role of doped layers in dephasing of 2D electrons in quantum well structures Role of doped layers in dephasing of 2D electrons in quantum well structures

2001-06-04

arxiv.org/abs/cond-mat/0106045v1

Phys. Rev. B 64, 193309 (2001)

Physics

Condensed Matter

Soft Condensed Matter

4 pages, 6 figures

Scientific paper

10.1103/PhysRevB.64.193309

The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in quantum well and to saturation of the phase breaking time at low temperature.

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