PbSnSe-on-Si infrared techniques: improvements in materials and devices

Details PbSnSe-on-Si infrared techniques: improvements in materials and devices PbSnSe-on-Si infrared techniques: improvements in materials and devices

Oct 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2816...42z&link_type=abstract

Proc. SPIE Vol. 2816, p. 42-45, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, Randolph E. Longshore; J

Physics

Scientific paper

Progress in the development of narrow gap IV-VI-on-Si technology for infrared sensor arrays is reviewed. Epitaxial Pb(subscript 1-x)Sn(subscript x)Se layers, about 4 micrometer thick, are grown by molecular beam epitaxy onto 3 inch Si(111) substrates, and employing an intermediate CaF(subscript 2) layer of only 2 nm thickness for compatibility reasons. Material quality is improved by proper growth conditions and annealing. Threading dislocation densities as low as 10(superscript 6) cm(superscript -2) are obtained in samples with 3 by 3 cm(superscript 2) size after proper anneal. It seems that glissile threading dislocations sweep out across the edge of the samples, and, in addition, such dislocations are able to react with sessile ones and transform them to glissile. Infrared photodiodes with much higher resistance area products can be obtained which approach the theoretical limit in a certain temperature range with such improved material quality. If the Pb/Pb(subscript 1-x)Sn(subscript x)Se infrared Schottky-barrier sensors are described with a model which allows fluctuations of the barrier height, the saturation of the resistance-area products at low temperatures as well as ideality factors very much greater than 1 are explained, too.

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