Temperature and Pressure Effects on the Resistivity of the Manganese Oxides

Details Temperature and Pressure Effects on the Resistivity of the Manganese Oxides Temperature and Pressure Effects on the Resistivity of the Manganese Oxides

1996-06-12

arxiv.org/abs/cond-mat/9606079v1

Physics

Condensed Matter

13 pages RevTex, 4 figures, to be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.55.1011

The temperature and pressure effects on the resistivity of the manganese oxides are studied analytically via the Kondo lattice model with a strong Hund's coupling. We obtain analytically the single-particle density of states on the Bethe lattice in the large connectivity limit using the analytical variant of the dynamic Lanczos method. From the density of states for the doped system, we obtain resistivity and show resistivity drop when temperature crosses the magnetic transition point. We also demonstrate the effect of pressure both below and above the transition temperature.

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