Dynamical mean-field study of the Mott transition in thin films

Details Dynamical mean-field study of the Mott transition in thin films Dynamical mean-field study of the Mott transition in thin films

1998-11-10

arxiv.org/abs/cond-mat/9811137v1

Eur. Phys. J. B 8, 555 (1999)

Physics

Condensed Matter

Strongly Correlated Electrons

LaTeX, 17 pages, 15 eps figures included, Eur. Phys. J. B (in press)

Scientific paper

10.1007/s100510050722

The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d=1 (two-dimensional) up to d=8. Using the dynamical mean-field theory, the lattice (film) problem is self-consistently mapped onto a set of d single-impurity Anderson models which are indirectly coupled via the respective baths of conduction electrons. The impurity models are solved at zero temperature using the exact-diagonalization algorithm. We investigate the layer and thickness dependence of the electronic structure in the low-energy regime. Effects due to the finite film thickness are found to be the more pronounced the lower is the film-surface coordination number. For the comparatively open sc(111) geometry we find a strong layer dependence of the quasi-particle weight while it is much less pronounced for the sc(110) and the sc(100) film geometries. For a given geometry and thickness d there is a unique critical interaction strength Uc2(d) at which all effective masses diverge and there is a unique strength Uc1(d) where the insulating solution disappears. Uc2(d) and Uc1(d) gradually increase with increasing thickness eventually approaching their bulk values. A simple analytical argument explains the complete geometry and thickness dependence of Uc2. Uc1 is found to scale linearly with Uc2.

Affiliated with

Also associated with

No associations

Rating

Dynamical mean-field study of the Mott transition in thin films does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Dynamical mean-field study of the Mott transition in thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamical mean-field study of the Mott transition in thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-11267