Thermally activated reorientation of di-interstitial defects in silicon

Details Thermally activated reorientation of di-interstitial defects in silicon Thermally activated reorientation of di-interstitial defects in silicon

1999-04-01

arxiv.org/abs/cond-mat/9904031v1

Physics

Condensed Matter

Materials Science

12 pages, REVTeX, Four figures, submitted to Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.83.1990

We propose a di-interstitial model for the P6 center commonly observed in ion implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to room-temperature D2d symmetry. The activation energy for the defect reorientation determined by ab initio calculations is 0.5 eV in agreement with the experiment. Our di-interstitial model establishes a link between point defects and extended defects, di-interstitials providing the nuclei for the growth.

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