Non-magnetic semiconductor spin transistor

Details Non-magnetic semiconductor spin transistor Non-magnetic semiconductor spin transistor

2003-07-28

arxiv.org/abs/cond-mat/0307687v1

Physics

Condensed Matter

Materials Science

Accepted for publication in Applied Physics Letters

Scientific paper

10.1063/1.1609656

We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor. The electronic structure and spin relaxation times for the spin transistor proposed here are calculated using a nonperturbative 14-band k.p nanostructure model.

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