Giant Carrier Mobility in Single Crystals of FeSb2

Details Giant Carrier Mobility in Single Crystals of FeSb2 Giant Carrier Mobility in Single Crystals of FeSb2

2008-04-23

arxiv.org/abs/0804.3625v1

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 3 figures. Applied Physics Letters (in press)

Scientific paper

10.1063/1.2926662

We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.

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